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All sciences. в„–7,В 2022. International Scientific Journal
Nilufar Tadjibayevna Mirzamaxmudova

Zuxro Akmaljonovna Akbarova

Oybek Muxammadovich Erkaboyev

Isroiljon Maxammatismoilovich Boltaboyev

Yakub Usmonovich Usmonov

G'olibjon Obbozjonovich Qo'ldoshev

Oqiljon Axmedovich G'ofurov

Mirjalol G'ulomjon o'g'li

Islom Nematov

Farruh Po'latjon o'g'li

Azizaxon Xasanjon qizi

Baxromjon Nomonjonov

Rinad Fuadovich Rumi

Shavkatjon Urinov

Shodiyaxon Solijonovna Solikova

Xojiakbar Sultanovich Daliyev

Saodatxon Abdulla qizi

E'zozaxon Musajonovna Ismoilova

Boxodir Xoshimovich Karimov

Zulfiya Abdumalikova

To'lanboy Dadajonov

Ekaterina Aleksandrovna Vavilova

Mirzakarim Mirzaxalilovich Yunusov

Muqaddas Vorisovna Maraimova

Obbozjon Xokimovich Qo'ldoshev

Robiya Nematova

Gulnozaxon Masxariddinovna Umarova

Abdullajon Odiljon o'g'li

Mushtariy Temur qizi

Dilshod Qo'ldoshaliyevich Yuldoshaliyev

Ibratjon Xatamovich Aliyev

The international scientific journal вЂњAll SciencesвЂќ, created at OOO вЂњElectron LaboratoryвЂќ and the Scientific School вЂњElectronвЂќ, is a scientific publication that publishes the latest scientific results in various fields of science and technology, also representing a collection of publications on the above topics by a board of authors and reviewed by the editorial Board (Academic Council) of the Scientific School вЂњElectronвЂќ and on the Ridero platform monthly.

All sciences. в„–7,В 2022

International Scientific Journal

Authors: AliyevВ IbratjonВ Xatamovich, MirzamaxmudovaВ NilufarВ Tadjibayevna, KarimovВ BoxodirВ Xoshimovich, RumiВ RinadВ Fuadovich, NematovВ Islom, Qo'ldoshevВ ObbozjonВ Xokimovich, o'g'liВ AbdullajonВ Odiljon, DadajonovВ To'lanboy, UrinovВ Shavkatjon, NematovaВ Robiya, YuldoshaliyevВ DilshodВ Qo'ldoshaliyevich, UsmonovВ YakubВ Usmonovich, AbdumalikovaВ Zulfiya, qiziВ AzizaxonВ Xasanjon, IsmoilovaВ E'zozaxonВ Musajonovna, MaraimovaВ MuqaddasВ Vorisovna, o'g'liВ MirjalolВ G'ulomjon, o'g'liВ FarruhВ Po'latjon, BoltaboyevВ IsroiljonВ Maxammatismoilovich, DaliyevВ XojiakbarВ Sultanovich, Qo'ldoshevВ G'olibjonВ Obbozjonovich, SolikovaВ ShodiyaxonВ Solijonovna, YunusovВ MirzakarimВ Mirzaxalilovich, qiziВ MushtariyВ Temur, VavilovaВ EkaterinaВ Aleksandrovna, ErkaboyevВ OybekВ Muxammadovich, NomonjonovВ Baxromjon, AkbarovaВ ZuxroВ Akmaljonovna, qiziВ SaodatxonВ Abdulla, UmarovaВ GulnozaxonВ Masxariddinovna, G'ofurovВ OqiljonВ Axmedovich

Editor-in-Chief, CEO of OOO "Electron Laboratory", President of the Electron Scientific School, Editor-in-Chief of the international scientific journal "All Sciences" Ibratjon Xatamovich Aliyev

Editor, Candidate of Physical and Mathematical Sciences, Associate Professor of the Department of "Technological Education" of the Faculty of Physics and Technology of Fergana State University, Scientific director of OOO "Electron Laboratory", Academician of the Scientific School "Electron", executive editor for Fergana State University and other unspecified regions, member of the Physics and Technology Department of the Scientific School "Electron" Boxodir Xoshimovich Karimov

Editor, Candidate in the field of economic sciences, Director of the Malaysian investor company Clipper Energy Comp. and Clipper Associates Corp., Economic consultant of OOO "Electron Laboratory", Professor of Economics at the "Electron" Scientific School, executive editor for the Malaysian Republic and English-speaking countries, member of the economic department of the "Electron" Scientific School Botirali Rustamovich Jalolov

Editor, Candidate in the field of economic sciences, Economic Head of OOO "Electron Laboratory", Chief Scientific Secretary of the Scientific School "Electron", Executive Editor for the Russian Federation and CIS countries, member of the economic department of the Scientific School "Electron" Farruh Murodjonovich Sharofutdinov

Editor, Doctor of Technical Sciences, Professor of the Scientific Research Institute "Physics of Semiconductors and Microelectronics" at the National University of the Republic of Uzbekistan, Executive Editor for the city/region of Tashkent, member of the Physics and Technology Department of the Electron Scientific School Obbozjon Xokimovich Qo'ldoshev

Editor, Senior Researcher, Head of the Accelerator Center at the Research Institute "Physics of Semiconductors and Microelectronics" at the National University of the Republic of Uzbekistan, Executive Editor of the Accelerator Center at the Research Institute of Semiconductors and Microelectronics at the Academy of Sciences of the Republic of Uzbekistan, member of the Department of Nuclear Physics of the Electron Scientific School Rinad Fuadovich Rumi

Editor, Doctor of Physical and Mathematical Sciences, Professor and Chief Researcher of the "Institute of Nuclear Physics" of the Republic of Uzbekistan, Member of the Department of Nuclear Physics of the Electron Scientific School Sergey Viktorovich Artyomov

Editor, Doctor of Technical Sciences, Professor and Rector of the Fergana Polytechnic Institute, Member of the Physics and Technology Department of the Electron Scientific School Uktam Raximovich Salomov

Editor, Doctor of Technical Sciences, Professor of the Department of "Electronics and Instrumentation" of the Faculty of Computer Design Systems of the Fergana Polytechnic Institute, Member of the Physics and Technology Department of the Electron Scientific School Sirojiddin Fayozovich Ergashev

Editor, Doctor of Physical and Mathematical Sciences, Professor and Head of the Department of "Technological Education" of the Faculty of Physics and Technology of Fergana State University, Member of the Physics and Technology Department of the Electron Scientific School Salim Madraximovich Otajonov

Editor, Doctor of Technical Sciences, Senior Researcher at the Laboratory of Materials Science of Electronic Engineering and Microelectronics at the Research Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, Member of the Physics and Technology Department of the Electron Scientific School Sayfullo Saidovich Nasriddinov

Editor, Doctor of Philosophy in Technical Sciences (PhD), Associate Professor and Dean of the Faculty of Physics and Technology of Fergana State University, Member of the Physics and Technology Department of the Electron Scientific School Sharof Shuxratovich Shuxratov

Editor, Candidate of Physical and Mathematical Sciences, Associate Professor of the Faculty of Mathematics and Computer Science of Fergana State University, Member of the Mathematical and Information Department of the Electron Scientific School Islombek Nematov

Editor, Candidate of Physical and Mathematical Sciences, Associate Professor of the Department of "Electronics and Instrumentation" of the Faculty of Computer Design Systems of the Fergana Polytechnic Institute, Executive Editor for the Fergana Polytechnic Institute, the Fergana branch of the Tashkent University of Information Technology and the United States of America, Member of the Physics and Technology Department of the Electron Scientific School Sultonali Mukaramovich Abduraxmonov

Editor, Candidate of Economic Sciences, Acting Associate Professor of the Fergana Polytechnic Institute, Member of the Physics and Technology Department of the Electron Scientific School Fozil Oripovich Obidov

Editor, Doctor of Philosophy in Technical Sciences (PhD), Associate Professor of the Department of "Information Security" of the Faculty of Computer Engineering of the Fergana Branch of the Tashkent University of Information Technologies named after Muhammad Al-Xorazmiy, Member of the Information Department of the Electron Scientific School Farruh Muxammadovich Muxtarov

Editor, Candidate of Technical Sciences, Associate Professor of the Department of "Technological Education" of the Faculty of Physics and Technology of Fergana State University, Member of the Physics and Technology Department of the Electron Scientific School Yakub Usmonovich Usmonov

Editor, Candidate of Biological Sciences, Associate Professor of the Department of Zoology and General Biology, Faculty of Natural Sciences, Fergana State University, Member of the Biological Department of the Electron Scientific School Muzaffar Auliyaxonovich Muxammadiyev

Editor, Candidate of Pedagogical Sciences, Associate Professor of the Department of "Information and Educational Technologies" of the Fergana branch of the Tashkent University of Information Technologies named after Muhammad Al-Xorazmiy, Member of the Pedagogical Department of the Electron Scientific School Inomjon Uktamovich Bilolov

Editor, Candidate of Physical and Mathematical Sciences, Associate Professor of the Research Institute "Physics of Semiconductors and Microelectronics" at the National University of the Republic of Uzbekistan, Member of the Department of Nuclear Physics of the Electron Scientific School Yakubbay Atabayevich Saydimov

Editor, Candidate of Physical and Mathematical Sciences, Associate Professor of the Department of "Technological Education" of the Faculty of Physics and Technology of Fergana State University, Member of the Physics and Technology Department of the Electron Scientific School Tursun Axmedovich Axmedov

Editor, Candidate of Technical Sciences, Associate Professor of the Department of Electrical Engineering, Electromechanics and Electro-Technologies of the Faculty of Energy of the Fergana Polytechnic Institute, Member of the Physics and Technology Department of the Electron Scientific School Shukurullo Yulbarsovich Usmonov

Editor, Doctor of Philosophy in Physical and Mathematical Sciences (PhD), Associate Professor and Deputy Dean of the Faculty of Physics and Technology of Fergana State University, Member of the Physics and Technology Department of the Electron Scientific School Sapura Malikovna Zaynolobidinova

Editor, Candidate of Physical and Mathematical Sciences, Associate Professor of the Department of "Physics" of the Faculty of Physics and Technology of Fergana State University, Member of the Physics and Technology Department of the Electron Scientific School Dilfuza Aminovna Yusupova

Editor, Lecturer in Physical and Technical Sciences of the Department of "Technological Education" of the Faculty of Physics and Technology of Ferghana State University, Member of the Physics and Technology Department of the Electron Scientific School Dilshod Quldoshaliyevich Yuldoshaliyev

Editor, Candidate in Physical and Technical Sciences of the Department of "Technological Education" of the Faculty of Physics and Technology of Ferghana State University, Member of the Physics and Technology Department of the Electron Scientific School Sherzod Boxodirovich Karimov

Editor, Candidate in the field of medical sciences, Member of the Medical, Biological and Philosophical Department of the Electron Scientific School Ra'noxon Mukaramovna Aliyeva

Editor, Lecturer in Mathematical and Information Sciences of the Department of "Mathematics" of the Faculty of Mathematics and Informatics of Fergana State University, Member of the Mathematical Department of the Electron Scientific School Sayyora Saidakbarovna Kukiyeva

Editor, Lecturer in Physical and Technical Sciences of the Department of "Physics" of the Faculty of Physics and Technology of Fergana State University, Member of the Physics and Technology Department of the Electron Scientific School Axlidiin Mirzoxidovich Qo'chqorov

Moderator, member of the Philosophical Department of the Electron Scientific School, Candidate in the field of philosophical sciences Xolidaxon Tulkinovna Aliyeva

Moderator, member of the Philological Department of the Electron Scientific School, Candidate in the field of philological sciences Gulnoza Masxariddinovna Umarova

Editor, Candidate in the field of philological sciences, Member of the Philological Department of the Electron Scientific School Oqiljon Axmedovich G'ofurov

Illustrator Ibratjon Xatamovich Aliyev

Illustrator Boxodir Xoshimovich Karimov

Illustrator Sultonali Mukaramovich Abdraxmonov

Illustrator Shukurullo Yulbarsovich Usmonov

Cover design Ibratjon Xatamovich Aliyev

Cover design Boxodir Xoshimovich Karimov

Cover design Xolidaxon Tulkinovna Aliyeva

Cover design ra'noxon Mukaramovna Aliyeva

Proofreader Ibratjon Xatamovich Aliyev

Proofreader Boxodir Xoshimovich Karimov

Proofreader Ekaterina Aleksandrovna Vavilova

Proofreader Botirali Rustamovich Jalolov

Proofreader Gulnoza Masxariddinovna Umarova

В©В Ibratjon Xatamovich Aliyev,В 2023

В©В Nilufar Tadjibayevna Mirzamaxmudova,В 2023

В©В Boxodir Xoshimovich Karimov,В 2023

В©В Rinad Fuadovich Rumi,В 2023

В©В Islom Nematov,В 2023

В©В Obbozjon Xokimovich Qo'ldoshev,В 2023

В©В Abdullajon Odiljon o'g'li,В 2023

В©В To'lanboy Dadajonov,В 2023

В©В Shavkatjon Urinov,В 2023

В©В Robiya Nematova,В 2023

В©В Dilshod Qo'ldoshaliyevich Yuldoshaliyev,В 2023

В©В Yakub Usmonovich Usmonov,В 2023

В©В Zulfiya Abdumalikova,В 2023

В©В Azizaxon Xasanjon qizi,В 2023

В©В E'zozaxon Musajonovna Ismoilova,В 2023

В©В Muqaddas Vorisovna Maraimova,В 2023

В©В Mirjalol G'ulomjon o'g'li,В 2023

В©В Farruh Po'latjon o'g'li,В 2023

В©В Isroiljon Maxammatismoilovich Boltaboyev,В 2023

В©В Xojiakbar Sultanovich Daliyev,В 2023

В©В G'olibjon Obbozjonovich Qo'ldoshev,В 2023

В©В Shodiyaxon Solijonovna Solikova,В 2023

В©В Mirzakarim Mirzaxalilovich Yunusov,В 2023

В©В Mushtariy Temur qizi,В 2023

В©В Ekaterina Aleksandrovna Vavilova,В 2023

В©В Oybek Muxammadovich Erkaboyev,В 2023

В©В Baxromjon Nomonjonov,В 2023

В©В Zuxro Akmaljonovna Akbarova,В 2023

В©В Saodatxon Abdulla qizi,В 2023

В©В Gulnozaxon Masxariddinovna Umarova,В 2023

В©В Oqiljon Axmedovich G'ofurov,В 2023

ISBNВ 978-5-0059-3250-1 (С‚. 7)

ISBNВ 978-5-0059-1753-9

Created with Ridero smart publishing system

DEDICATED TOВ THE HIGHLY RESPECTED SCIENTIST, PROFESSOR TOSHIBOY MIRZAMAKHMUDOVICH MIRZAMAKHMUDOV

UDC 930.85

Mirzamakhmudov Tojiboy Mirzamakhmudovich (1941вЂ”2009)

Mirzamakhmudov Tozhiboy Mirzamakhmudovich was born on February 22, 1941 inВ the village ofВ Nursukh ofВ the Uzbek district ofВ the Fergana region inВ aВ working family ofВ collective farmers. From school, the future outstanding scientist actively studied science, conducted aВ variety ofВ experiments already at that time, showing aВ tremendous interest inВ creation and study. And after aВ while, he was awarded admission toВ the Fergana Pedagogical Institute Faculty ofВ Physics back inВ 1957, where he actively continued his activities while still aВ student. Even then, many scientists-professors and associate professors predicted aВ great future for him inВ the field ofВ science. After graduating with honors from the Fergana Pedagogical Institute inВ 1962, he began his academic career byВ being hired as aВ junior researcher at the Fergana State Pedagogical Institute.

InВ 1964, he entered postgraduate studies at the Physics and Technology Institute ofВ the Academy ofВ Sciences. While studying inВ graduate school, he continued toВ work intensively, more and more forming his own scientific ideology, but time inexorably continued toВ go on, thereby forming aВ young graduate student, aВ future scientist. After graduating from graduate school, he began working as aВ leading engineer at the Physics and Technology Institute ofВ the Academy ofВ Sciences. InВ graduate school, under the guidance ofВ Academician ofВ the Academy ofВ Sciences ofВ Uzbekistan Adirovich Emanuel Ilyich, who was known for his strictness and exactingness both toВ himself and toВ his students, ofВ whom there were not aВ few, but also Mirzamakhmudovich, as follows from the above, was honored toВ be named aВ student ofВ Adirovich, after which he published more than 10 scientific papers.

During the next 6 years, he actively worked on the creation ofВ his first great scientific work on his own ideaВ вЂ“ aВ real PhD thesis inВ the field ofВ studying abnormally high voltages. So inВ 1970, Tozhiboy Mirzamakhmudovich defended his PhD thesis on the occurrence ofВ abnormally high photo-voltage on cadmium telluride semiconductor films. So inВ the same year he was hired as aВ senior lecturer at the Fergana State Pedagogical Institute until 1976. Even then, he actively began training studentsВ вЂ“ future outstanding scientists, among whom were B. H. Karimov, M.A. Karimov, M. M. Ayubzhonov, M.A. Aliyev and others. And inВ 1976, the Higher Attestation Commission, taking into account his scientific and pedagogical work, awarded him the academic title ofВ associate professor.

According toВ the memoirs ofВ the students, it can be noted that he was quite demanding ofВ his students, however, like his mentor, but more often expressed kindness and provided mutual assistance. Even then, he sent his students toВ develop their scientific careers inВ leading scientific centers, aВ vivid example ofВ this is Bokhodir Karimov, with whom he personally left for Moscow toВ the Institute ofВ Crystallography ofВ the Academy ofВ Sciences ofВ the Russian Federation, where he personally introduced Professor Vladimir Mikhailovich Fridkin. And less than 4 years have passed since his student became aВ candidate ofВ physical and mathematical sciences, like his mentor.

So since 1976В Mirzamakhmudov Tozhiboy Mirzamakhmudovich has been working as an associate professor ofВ the Department ofВ Physics at the Fergana Polytechnic Institute. At that time, he was actively teaching, but also paid great attention toВ scientific knowledge and research. The result ofВ his desire for science was that he arrived at Vilnius State University. And already 2В years later, that is, since 1978, he was awarded the position ofВ senior researcher at the same Vilnius State University.

Tozhiboy Mirzamakhmudov among fellow scientists and students

InВ this scientific center ofВ Vilnius, he actively continued his scientific activities, choosing for himself aВ very interesting scientific direction. He was interested inВ the occurrence ofВ abnormally high photovoltage inВ semiconductor films. For example, on one centimeter ofВ such aВ semiconductor, it was possible toВ get as much as 2,000 Volts (!), which was just an amazing result, requiring theoretical justification for itself, as well as aВ number ofВ proofs.

His works did not remain without aВ trace and already inВ 1979, Tozhiboy Mirzamakhmudovich defended his doctoral dissertation at the same Vilnius State University on this burning topic: вЂњThe occurrence ofВ abnormally high photovoltage inВ semiconductor films and new principles for the creation ofВ optoelectronic devices.вЂќ It is worth noting that inВ the subject ofВ the dissertation, not only the justification ofВ the phenomenon itself is derived, but also its practical application for the creation ofВ optoelectronic devices that increase their efficiency is proposed.

But as time went on, the love for the Motherland became stronger and stronger, increasing the desire toВ once again contemplate such dear lands ofВ Uzbekistan, their relatives, two sons and aВ daughter, as well as the Fergana Polytechnic Institute (FerPI), which has already become almost native. That is why he returned toВ Uzbekistan inВ 1980 toВ FerPI and since that time his activities have been closely connected with the Polytechnic Institute. There he begins toВ head the Faculty ofВ Energy.

At the time ofВ 1982, he, being at the very dawn ofВ his strength, at the age ofВ 41, saw the next fruits ofВ his laborsВ вЂ“ the higher attestation commission awarded the academic title ofВ professor toВ Also Mirzamakhmudovich. From 1984 toВ 1987, Tozhiboy Mirzamakhmudovich took the honorary post ofВ vice-rector ofВ the evening correspondence department ofВ the Fergana Polytechnic Institute, actively continuing his scientific activities, but the craving for knowledge, the thirst for creation continued toВ torment him, which is why from 1987 toВ 1991 he assumed the post ofВ vice-rector for Research, where he was able toВ plunge again into the amazing world ofВ science and creation.

Mirzamakhmudov was widely known and recognized for his work inВ the field ofВ research ofВ photoresistive and photoelectric phenomena inВ semiconductor film elements. ToВ put it more simply, these film elements transmitted energy when illuminated, but inВ its absence they did not immediately lose it, but reduced the amount ofВ transmitted current very evenly, up toВ aВ certain amount, which they stored like aВ memory element!

InВ this field, Mirzamakhmudov and aВ group ofВ his students conducted aВ series ofВ studies on the development and study ofВ photo-portrait elements, those very memory cells that arise due toВ the internal field ofВ p-n transitions. For the first time inВ the world, photoelectric elements from triple semiconductor compounds were discovered, that is, if single or binary compounds were previously used and their properties were already studied, then triple compounds were discovered here for the first time, surprisingly their properties were much more complex than binary, not toВ mention single cases. And inВ 1988, under the leadership ofВ Mirzamakhmudov, aВ new effect was first revealedВ вЂ“ an abnormally high photoelectromagnetic voltage without an external field inВ two film semiconductor materials, which meant that not only when an electric current passed through the crystals, but also through the film, the Hall effect was observedВ вЂ“ aВ deviation ofВ electron flows inВ aВ magnetic field, along with the fact that the current flowed and straight, deviating aВ little, so even inВ the film it was possible toВ separate the charge.

During his long scientific career, which lasted more than 50 years, Mirzamakhmudov published more than 100 scientific papers, two monographs received more than 10 authorвЂ™s certificates. He is the author ofВ several methodological manuals and the editor ofВ textbooks on theoretical physics. Some ofВ his works have been published inВ Bulgaria, Czechoslovakia and Japan. At the initiative ofВ Tozhiboy Mirzamakhmudovich, many scientific laboratories studying the most pressing issues and problems ofВ modern science ofВ that time were opened at the Fergana Polytechnic Institute, aВ postgraduate school and small commercial enterprises were established, and aВ research laboratory for the study ofВ the physicochemical properties ofВ semiconductor solar cells was established under his direct supervision.

Tozhiboy Mirzamakhmudovich devoted aВ lot ofВ effort and energy toВ establishing scientific contacts with leading centers and universities ofВ the country. Mirzamakhmudov had the ability toВ see aВ future scientist inВ aВ student and aВ young specialist, toВ direct his activities inВ the direction ofВ scientific research. More than twenty PhD theses have been defended under his leadership.

The results ofВ the research ofВ the InstituteвЂ™s employees who worked under the leadership ofВ Mirzamakhmudov are widely implemented today inВ the field ofВ physics, mathematics, chemistry and other sciences. And many ofВ his scientific works continue toВ be published posthumously, honoring his memory, aВ vivid example ofВ this is the textbook вЂњElectronics AsoslariвЂќ published inВ 2022, co-authored byВ his student B. Karimov.

The great scientist continued his work, leaving behind aВ great legacy not only inВ the face ofВ his numerous works, but also not small students who are now candidates, doctors ofВ sciences, professors, and some have already gone with their teacher toВ another world.

Tozhiboy Mirzamakhmudovich himself left our world on November 9, 2009, leaving behind the great memory ofВ the great scientistвЂ¦

В В В В Nilufar Tajibayevna Mirzamakhmudova
В В В В Senior Lecturer ofВ the Department ofВ вЂњHigher MathematicsвЂќ ofВ the Faculty ofВ Mechanics and Mechanical Engineering ofВ the Fergana Polytechnic Institute
В В В В Bokhodir Hashimovich Karimov
В В В В Candidate ofВ Physical and Mathematical Sciences, Associate Professor ofВ the Faculty ofВ Physics and Technology ofВ Fergana State University

PHYSICAL SCIENCES

THE USE OFВ NEW NANOSTRUCTURE METHODS ALLOWING TOВ INCREASE THE MONOCHROMATICITY OFВ THE BEAM DURING ACCELERATION

UDCВ 621

Rinat FuadovichВ Rumi

Senior Researcher, Head ofВ the Laboratory ofВ Accelerator Technology at the Research Institute вЂњPhysics ofВ Semiconductors and MicroelectronicsвЂќ at the National University ofВ Uzbekistan

Laboratory ofВ Accelerator Technology at the Research Institute вЂњPhysics ofВ Semiconductors and MicroelectronicsвЂќ at the National University ofВ Uzbekistan, Tashkent, Uzbekistan

Abstact. The development ofВ accelerator technology has been actively observed after numerous works byВ Ernest Rutherford, from the discovery ofВ the planetary model and the implementation ofВ the first nuclear reaction toВ the present day. And it is worth noting that for each time there were quite interesting requirements for charged particle beams, among which the most popular requirement at almost all times was the beam energy, then its current can be noted, but one ofВ the most important among them is the monochromaticity ofВ the charged particle beam.

Keywords: monochromaticity, monoenergetics, charged particle beam, accelerator, nanostructures.

РђРЅРЅРѕС‚Р°С†РёСЏ. Р Р°Р·РІРёС‚РёРµ СѓСЃРєРѕСЂРёС‚РµР»СЊРЅРѕР№ С‚РµС…РЅРёРєРё РЅР°Р±Р»СЋРґР°Р»РѕСЃСЊ Р°РєС‚РёРІРЅРѕ РїРѕСЃР»Рµ РјРЅРѕРіРѕС‡РёСЃР»РµРЅРЅС‹С… СЂР°Р±РѕС‚ РСЂРЅРµСЃС‚Р° Р РµР·РµСЂС„РѕСЂРґР°, РѕС‚В РѕС‚РєСЂС‹С‚РёСЏ РїР»Р°РЅРµС‚Р°СЂРЅРѕР№ РјРѕРґРµР»Рё РёВ РѕСЃСѓС‰РµСЃС‚РІР»РµРЅРёСЏ РїРµСЂРІРѕР№ СЏРґРµСЂРЅРѕР№ СЂРµР°РєС†РёРё РґРѕВ СЃРµРіРѕРґРЅСЏС€РЅРёР№ РґРЅРµР№. Р?В СЃС‚РѕРёС‚ РѕС‚РјРµС‚РёС‚СЊ, С‡С‚Рѕ РґР»СЏ РєР°Р¶РґРѕРіРѕ РІСЂРµРјРµРЅРё СЃСѓС‰РµСЃС‚РІРѕРІР°Р»Рё РґРѕРІРѕР»СЊРЅРѕ РёРЅС‚РµСЂРµСЃРЅС‹Рµ С‚СЂРµР±РѕРІР°РЅРёСЏ РєВ РїСѓС‡РєР°Рј Р·Р°СЂСЏР¶РµРЅРЅС‹С… С‡Р°СЃС‚РёС†, СЃСЂРµРґРё РєРѕРёС… СЃР°РјС‹Рј РїРѕРїСѓР»СЏСЂРЅС‹Рј С‚СЂРµР±РѕРІР°РЅРёРµРј РїРѕС‡С‚Рё РІРѕВ РІСЃРµ РІСЂРµРјРµРЅР° СЏРІР»СЏР»Р°СЃСЊ СЌРЅРµСЂРіРёСЏ РїСѓС‡РєР°, Р·Р°С‚РµРј РјРѕР¶РЅРѕ РѕС‚РјРµС‚РёС‚СЊ РµРіРѕ С‚РѕРє, РЅРѕВ РѕРґРЅРёРј РёР·В РІР°Р¶РЅС‹С… СЃСЂРµРґРё РЅРёС… СЏРІР»СЏРµС‚СЃСЏ РјРѕРЅРѕС…СЂРѕРјРѕС‚РёС‡РЅРѕСЃС‚СЊ РїСѓС‡РєР° Р·Р°СЂСЏР¶РµРЅРЅС‹С… С‡Р°СЃС‚РёС†.

РљР»СЋС‡РµРІС‹Рµ СЃР»РѕРІР°: РјРѕРЅРѕС…СЂРѕРјР°С‚РёС‡РЅРѕСЃС‚СЊ, РјРѕРЅРѕСЌРЅРµСЂРіРµС‚РёС‡РЅРѕСЃС‚СЊ, РїСѓС‡РѕРє Р·Р°СЂСЏР¶РµРЅРЅС‹С… С‡Р°СЃС‚РёС†, СѓСЃРєРѕСЂРёС‚РµР»СЊ, РЅР°РЅРѕСЃС‚СЂСѓРєС‚СѓСЂС‹.

Introduction

Initially, it is necessary toВ give aВ general concept ofВ the monochromaticity parameter itself, which is often associated with monoenergetics. The whole point is that the beam, after its formation byВ thermionic, auto- or other emission, has aВ heterogeneity inВ energy, which is why the particles inВ its various regions have different, albeit slightly distinguishable energies. With acceleration, their given spread or gradient increases, although it becomes smoother. For example, on accelerators ofВ the 80s, an example ofВ which is the SOKOL-2В accelerator, monoenergetics ofВ up toВ 5В keV is achieved at 2В MeV ofВ the total beam energy, while on modern accelerators, at an energy ofВ 20В MeV, an accuracy ofВ up toВ 1В keV is achieved inВ maximum accuracy.

Problems

If the question arises about the figure ofВ this value, then it is thanks toВ it that we can talk about the effectiveness ofВ the entire reaction, because as far as the energies inВ the beam are homogeneous and have aВ value close toВ each other, so much more ofВ them will be close toВ the energy desired for this reaction channelВ вЂ“ toВ the necessary resonance, which will make the reaction more efficient.

Today, exo-energetic nuclear reactions are known, the output particles inВ which have more energy than at the input, but at the same time such aВ reaction takes place only for aВ part ofВ the particles due toВ the very smallness ofВ the total monoenergetics ofВ the beam.

Solving the problem

ToВ achieve results, that is, toВ increase the efficiency ofВ the conducted nuclear reaction, it is necessary toВ increase monoenergetics, and for this it is necessary toВ develop aВ method for equalizing energy on different parts ofВ the beam. As is known, inВ aВ magnetic field, under the influence ofВ the Lorentz force (1вЂ”2), particles are deflected, while the beam at the maximum energy inВ its center and decreasing closer toВ the edges is stratified, passing into aВ kind ofВ energy gradient.

Further, it is more likely that the beam will be divided into component parts, where the losses will be much less than it would be with вЂњbeam selectionвЂќ with losses ofВ more than 90%, namely, for divisions, the losses will be only 12%. Nanotubes, inВ themselves, are formations resembling carbon tubes that transmit aВ charge, but at the same time separated from each other byВ aВ dielectric layer ofВ molecules.

For the formation ofВ aВ charge inВ such aВ system, aВ vertical and horizontal transmission line is carried out toВ each tube, with the closure ofВ which this particular cell is charged. When aВ second system ofВ the same type is located opposite, aВ potential difference arises between them, thanks toВ which it is possible toВ give energy inВ the gradient spectrum, the reverse ofВ the incoming beam gradient, while losing only 12% ofВ the total number ofВ charges, and, accordingly, current.

At the same time, it is important toВ note that although it is not so difficult toВ vary the potential differences within the framework ofВ aВ modern 1 keV accelerator, but the accuracy is not infinite. While maintaining the same voltage ratio for 20 MeV, an accuracy ofВ up toВ 0.04вЂ”0.05 eV can be achieved, which is aВ shocking result.

But this technology is currently being developed inВ aВ theoretical matter and is not without disadvantages, for example, such aВ system is suitable for fairly small beams with currents ofВ 1В nA and only inВ very rare cases up toВ 1В ВµA, but it is possible toВ find aВ solution with the creation ofВ sets ofВ such small beams divisible inВ the future, but this stage is the beginning aВ new study that further increases the efficiency ofВ accelerator technology and possibly, with the implementation ofВ this technology on the charged particle accelerator ofВ the Electron project, it will become possible toВ name this accelerator having the highest monoenergetics ofВ the beam, and, accordingly, the highest efficiency ofВ all nuclear reactions carried out onВ it.

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MATHEMATICAL SCIENCES

DIRECT APPLICATION OFВ IMPLICATION AND EQUIVALENCE

UDC 519.9

Nematov Islom

Candidate ofВ Physical and Mathematical Sciences, Associate Professor ofВ the Department ofВ вЂњMathematicsвЂќ ofВ the Faculty ofВ Mathematics and Computer Science ofВ Fergana State University

Aliev Ibratjon Xatamovich

2nd year student ofВ the Faculty ofВ Mathematics and Computer Science ofВ Fergana State University

Ferghana State University, Uzbekistan

Annotation. Discrete mathematics, which is increasingly gaining popularity, has also been able toВ find its own application thanks toВ the introduction ofВ new information sciences using the binary number system, both inВ the face ofВ classical and quantum computer science. InВ this paper, the question ofВ finding not only the indirect, but also the direct direct application ofВ implication and equivalence operations known since the 60s ofВ the XX century, the search for which has continued toВ the present time, is considered.

Keywords: discrete mathematics, implication, equivalence, direct application, practical application, technical understanding, electrical circuit.

РђРЅРЅРѕС‚Р°С†РёСЏ. Р”РёСЃРєСЂРµС‚РЅР°СЏ РјР°С‚РµРјР°С‚РёРєР° РІСЃС‘ Р±РѕР»СЊС€Рµ РїРѕР»СѓС‡Р°СЋС‰Р°СЏ РїРѕРїСѓР»СЏСЂРЅРѕСЃС‚СЊ С‚Р°РєР¶Рµ СЃРјРѕРіР»Р° РЅР°Р№С‚Рё РёВ СЃРѕР±СЃС‚РІРµРЅРЅРѕРµ РїСЂРёРјРµРЅРµРЅРёРµ Р±Р»Р°РіРѕРґР°СЂСЏ РІРІРµРґРµРЅРёСЋ РЅРѕРІС‹С… РёРЅС„РѕСЂРјР°С†РёРѕРЅРЅС‹С… РЅР°СѓРє СЃВ РёСЃРїРѕР»СЊР·РѕРІР°РЅРёРµРј РґРІРѕРёС‡РЅРѕР№ СЃРёСЃС‚РµРјС‹ СЃС‡РёСЃР»РµРЅРёСЏ, РєР°Рє РІВ Р»РёС†Рµ РєР»Р°СЃСЃРёС‡РµСЃРєРѕР№, С‚Р°Рє РёВ РєРІР°РЅС‚РѕРІРѕР№ РёРЅС„РѕСЂРјР°С‚РёРєРё. Р’В РґР°РЅРЅРѕР№ СЂР°Р±РѕС‚Рµ СЂР°СЃСЃРјРѕС‚СЂРµРЅ РІРѕРїСЂРѕСЃ РѕС‚РЅРѕСЃРёС‚РµР»СЊРЅРѕ РЅР°С…РѕР¶РґРµРЅРёСЏ РЅРµВ С‚РѕР»СЊРєРѕ РёР·РІРµСЃС‚РЅРѕРіРѕ РµС‰С‘ СЃВ 60-С… РіРѕРґРѕРІ XX РІРµРєР° РєРѕСЃРІРµРЅРЅРѕРіРѕ, РЅРѕВ РёВ РЅРµРїРѕСЃСЂРµРґСЃС‚РІРµРЅРЅРѕРіРѕ РїСЂСЏРјРѕРіРѕ РїСЂРёРјРµРЅРµРЅРёСЏ РѕРїРµСЂР°С†РёР№ РёРјРїР»РёРєР°С†РёРё РёВ СЌРєРІРёРІР°Р»РµРЅС†РёРё, РїРѕРёСЃРє РєРѕРёС… РїСЂРѕРґРѕР»Р¶Р°Р»СЃСЏ РґРѕВ РЅР°СЃС‚РѕСЏС‰РµРіРѕ РІСЂРµРјРµРЅРё.

РљР»СЋС‡РµРІС‹Рµ СЃР»РѕРІР°: РґРёСЃРєСЂРµС‚РЅР°СЏ РјР°С‚РµРјР°С‚РёРєР°, РёРјРїР»РёРєР°С†РёСЏ, СЌРєРІРёРІР°Р»РµРЅС†РёСЏ, РїСЂСЏРјРѕРµ РїСЂРёРјРµРЅРµРЅРёРµ, РїСЂР°РєС‚РёС‡РµСЃРєРѕРµ РїСЂРёРјРµРЅРµРЅРёРµ, С‚РµС…РЅРёС‡РµСЃРєРѕРµ РѕСЃРјС‹СЃР»РµРЅРёРµ, СЌР»РµРєС‚СЂРёС‡РµСЃРєР°СЏ СЃС…РµРјР°.

At the moment, aВ variety ofВ operations are actively used inВ discrete mathematics and logic toВ describe the conduct ofВ actions on judgments. So the main operations are conjunction, disjunction and negation, so known as logical multiplication, logical addition and logical negation, respectively. They allowed us toВ operate on various judgments that accept the result either вЂњtrueвЂќВ вЂ“ 1 or вЂњfalseвЂќВ вЂ“В 0.

Each ofВ the operations at the same time had its own truth table. For conjunction it is (Table 1), for disjunctionВ вЂ“ (Table 2) and logical negationВ вЂ“ (TableВ 3).

At the same time, for the conjunction (logical вЂњAndвЂќ), aВ serial connection scheme takes place inВ the practical description (Fig. 1), described inВ the following cases:

1. If there is no current through вЂњAвЂќ and through вЂњBвЂќ, as aВ result there is no current;

2. If there is aВ current inВ вЂњAвЂќ, but inВ the absence through вЂњBвЂќ, as aВ result there is no current;

3. If there is no current inВ вЂњAвЂќ, but inВ the presence ofВ вЂњBвЂќ, as aВ result there is no current;

4. If there is aВ current inВ вЂњAвЂќ and inВ the presence ofВ вЂњBвЂќ, as aВ result, there is aВ current.

Fig. 1. Serial connection

For aВ disjunction (logical вЂњORвЂќ), aВ similar representation can be seen inВ the face ofВ aВ parallel connection (Fig. 2), described already inВ the following cases:

1. If there is no current through вЂњAвЂќ and through вЂњBвЂќ, as aВ result there is no current;

2. If there is aВ current inВ вЂњAвЂќ, but inВ the absence ofВ through вЂњBвЂќ, as aВ result, there is aВ current;

3. If there is no current inВ вЂњAвЂќ, but inВ the presence ofВ вЂњBвЂќ, as aВ result, there is aВ current;

4. If there is aВ current inВ вЂњAвЂќ and inВ the presence ofВ вЂњBвЂќ, as aВ result, there is aВ current.

Fig. 2. Parallel connection

For logical negation (logical вЂњNOTвЂќ), everything is even simpler, because it can be represented as an ordinary reverse button (Fig. 3), describing the actions as follows:

1. If there is aВ current inВ вЂњAвЂќ, as aВ result there is no current;

2. If there is no current inВ вЂњAвЂќ, as aВ result, there is aВ current.

Fig. 3. вЂњButtonвЂќВ вЂ“ logical negation inВ the circuit

But along with these operations, there were also implication and equivalence operations, where implication is aВ logical consequence or statement вЂњFollows from hereвЂќ, and equivalence is logical equivalence and or the statement вЂњThen and only thenвЂќ had the following truth table (Table 4), and equivalenceВ вЂ“ (TableВ 5).

At the same time, both operations have not yet been applied inВ practice inВ direct form, as it looked for conjunction and disjunction. ToВ date, the transformation is used for implication (1) and for equivalenceВ (2).

That is, the implication can be represented as aВ negation ofВ the first and aВ disjunction with the second statement, and the equivalence as aВ conjunction ofВ the negations ofВ both judgments on the disjunction ofВ the conjunction ofВ both judgments. If we check the truth ofВ (1) and (2) on the table, then the result will be valid (Table 6вЂ”7).

And the methods presented were considered the only possible ones toВ this day, until finally an electric element was created, aВ kind ofВ connection inВ which implication and equivalence would be performed inВ the direct case.

The first device, the implicator, consists ofВ aВ vacuum flask 7В with aВ cathode 3В and an anode 1, between which an anode grid 2В is placed. The distance between the cathode and the anode l is verified with the accuracy that it is less than or equal toВ the free path ofВ electrons that have flown from the cathode toВ the anode. There is also an isolated electrode 6, connected from the outside (behind the bulb) toВ the cathode pin 3, but not connected toВ it (Fig.В 4).

Fig. 4. Implicature scheme

Thus, let the anode grid 2 act as the second statement, the cathode 3 as the first, and the anode 1 as the result. At the same time, aВ condition is introduced that before the current 4 arrives at the cathode 3, aВ divider 5 is supplied, which reacts toВ the magnitude ofВ the incoming current, if the current is greater than or equal toВ aВ certain value taken as the truth ofВ the first judgment, then it is connected toВ the cathode 3, otherwise toВ the electrode 6 coming out ofВ the anode. InВ this case, the exception is the case when there is aВ current on the anode grid 2, while it is assumed that the current does not go toВ the cathode and toВ the cathode circuit atВ all.

So, inВ this scheme, we can consider four situations:

1. If there is no current at the cathode and there is no current on the anode grid, then the current flows through the electrode toВ the anode, as aВ result there is aВ current;

2. If there is current at the cathode, but there is no current on the anode grid, then the electrons reach the anode, as aВ result there is current;

3. If there is no current at the cathode, but there is no current on the anode grid, there are also no electrons inВ the bulb, which is why there is no current as aВ result;

4. If there is current at the cathode and there is current on the anode grid, then the electrons receive additional acceleration, which means that there is also current as aВ result.

This device, as you can see, although with aВ couple ofВ conventions, which can be completely replaced byВ reducing elements, aВ kind ofВ sensors or switches, fully performs the function ofВ implication. But it is also interesting toВ mention here that neither conjunction nor disjunction was used, nor even negation, unless ofВ course the вЂњswitchвЂќ is considered an extremely distant relative ofВ negation, which would be inappropriate. Moreover, this system acts as aВ single element that fully fulfills the task.

Speaking ofВ this type ofВ connection, it should be called aВ вЂњclose mixedвЂќ connection, or aВ вЂњPromichtovoeвЂќ connection, from the Latin proreВ вЂ“ вЂњcloseвЂќ and mixtaВ вЂ“ вЂњmixedвЂќ, since both parallel and serial connection are involved here, but more figuratively, because ofВ which this connection acts newВ вЂ“ the third kind.

The situation with equivalence is similar, but the difference is that the distance between the cathode 3 and the anode 1В вЂ“ L (for the equivalentor) must be strictly greater than the electron path length so that they cannot reach it without the help ofВ an anode grid, which, however, explains why the implicator is connected вЂњclose-mixedвЂќ connection. When using the same equivalentor (Fig. 5)В вЂ“ aВ device that performs the function ofВ equivalence, there are also 4 cases:

1. If there is no current at the cathode and there is no current on the anode grid, then the current flows through the electrode toВ the anode, as aВ result there is aВ current;

2. If there is current at the cathode, but there is no current on the anode grid, then the electrons do not reach the anode, as aВ result there is no current;

3. If there is no current at the cathode, but there is no current on the anode grid, there are also no electrons inВ the bulb, which is why there is no current as aВ result;

4. If there is aВ current at the cathode and there is aВ current on the anode grid, then the electrons receive additional acceleration, which means that there is aВ current as aВ result.

Fig. 5. The scheme is equivalentВ to

The equivalentor is similarly connected byВ the type ofВ connection inВ this case byВ aВ вЂњfar-mixedвЂќ or вЂњLongmichthвЂќ connection, from the Latin longeВ вЂ“ вЂњfar awayвЂќ and mixtaВ вЂ“ вЂњmixedвЂќ.

Thus, it is possible toВ demonstrate two elementsВ вЂ“ an implicator and an equivalentor that fully perform the functions ofВ implication and equivalence inВ modern electronics, finding perfect application, allowing toВ reduce space at times, because these circuits can be made inВ an arbitrarily small size, along with replacing the вЂњdiode-lampвЂќ part with the presence ofВ vacuum with modern triodes with the usual additional switchable connection for the implicator and more upgraded triodes with the same switches and connection for the equivalentator.

Presenting this scheme, we can hope that it will bring its benefits, contributing toВ the development ofВ modern science and technology, improving and bringing new things toВ science, as well as opening up new even more grandiose horizons toВ the entire human civilization!

Used literature

1.В Mendelson E. вЂњIntroduction toВ mathematical logicвЂќ.В вЂ“ M. Nauka, 1971.

2. Edelman S. L. Mathematical logic.В вЂ“ M.: Higher School, 1975.В вЂ“ 176В p.

3. Igoshin V. I. Taskbook-practical course inВ mathematical logic.В вЂ“ M.: Enlightenment, 1986.В вЂ“ 158В p.

4. Gindikin S. G. Algebra ofВ logic inВ problems.В вЂ“ M.: Nauka, 1972.В вЂ“ 288В p

.5. BarabanovВ O. O. Implication / Proceedings ofВ the XI International Kolmogorov readings: collection ofВ articles.В вЂ“ Yaroslavl: YAGPU Publishing House, 2013. pp.49вЂ”53.

INFORMATION TECHNOLOGY

AВ WAY TOВ PROTECT INFORMATION FROM UNAUTHORIZED ACCESS TOВ THEВ VOLS

UDC 004.056

Kuldashov Obozjon Khakimovich

Doctor ofВ Technical Sciences, Professor ofВ the Scientific Research Institute вЂњPhysics ofВ Semiconductors and MicroelectronicsвЂќ at the National University ofВ Uzbekistan

Komilov Abdullazhon Odiljon ugli

Assistant ofВ the Fergana branch ofВ the Tashkent University ofВ Information Technologies named after Muhammad al-Khorezmi

Ferghana branch ofВ Tashkent University ofВ Information Technologies named after Muhammad al-Khorezmi

Annotation. The article proposes aВ method for protecting an information signal from unauthorized access inВ aВ fiber-optic communication line, provides aВ block diagram and the principle ofВ operation ofВ the device.

Keywords: fiber-optic line, communication, information signal, protection method, device, block diagram.

РђРЅРЅРѕС‚Р°С†РёСЏ. Р’В СЃС‚Р°С‚СЊРµ РїСЂРµРґР»РѕР¶РµРЅ СЃРїРѕСЃРѕР± Р·Р°С‰РёС‚С‹ РёРЅС„РѕСЂРјР°С†РёРѕРЅРЅРѕРіРѕ СЃРёРіРЅР°Р»Р° РѕС‚В РЅРµСЃР°РЅРєС†РёРѕРЅРёСЂРѕРІР°РЅРЅРѕРіРѕ РґРѕСЃС‚СѓРїР° РІВ РІРѕР»РѕРєРѕРЅРЅРѕ-РѕРїС‚РёС‡РµСЃРєРѕР№ Р»РёРЅРёРё СЃРІСЏР·Рё, РїСЂРёРІРµРґРµРЅР° Р±Р»РѕРє СЃС…РµРјР° РёВ РїСЂРёРЅС†РёРї СЂР°Р±РѕС‚С‹ СѓСЃС‚СЂРѕР№СЃС‚РІР°.

РљР»СЋС‡РµРІС‹Рµ СЃР»РѕРІР°: РІРѕР»РѕРєРѕРЅРЅРѕ-РѕРїС‚РёС‡РµСЃРєР°СЏ Р»РёРЅРёСЏ, СЃРІСЏР·СЊ, РёРЅС„РѕСЂРјР°С†РёРѕРЅРЅС‹Р№ СЃРёРіРЅР°Р», СЃРїРѕСЃРѕР± Р·Р°С‰РёС‚С‹, СѓСЃС‚СЂРѕР№СЃС‚РІРѕ, Р±Р»РѕРє СЃС…РµРјР°.

InВ recent years, one ofВ the most promising and developing areas ofВ building aВ communication network inВ the world is the VOLS.

The priority direction ofВ the development ofВ the transport network ofВ Uzbekistan is the transfer ofВ the network toВ the widespread use ofВ fiber optic networks with digital transmission systems.

This made it possible toВ organize reliable high-quality communication not only between the вЂњtelephone continentsвЂќ, but also communication on the National Telecommunications Network ofВ Uzbekistan. The realization ofВ this task has become possible since 1997 after the completion ofВ the construction and commissioning ofВ the national segment ofВ TAEВ вЂ“ aВ large-scale international project вЂњTrans-Asian-European VOLSвЂќ.

InВ 2011, the task was toВ ensure the development and modernization ofВ the telecommunications network based on the introduction ofВ modern broadband and optical technologies, the introduction ofВ over 950 kilometers ofВ fiber optic lines, the expansion ofВ the data transmission transport network toВ regional centers.

Throughout the country, at the level ofВ district centers, obsolete analog telephone exchanges have been replaced with modern digital ones. High-speed digital channels have been created on the basis ofВ the VOLS, work is underway toВ expand the network and improve its reliability. The created infrastructure serves as the basis for the rapid development ofВ wireless technologies, inВ particular, mobile communications. As aВ result, the level ofВ coverage byВ the digital telecommunications network ofВ regions, district centers and cities ofВ the Republic amounted toВ 100 percent, the level ofВ coverage byВ the telecommunications network ofВ rural settlementsВ вЂ“ 95.7 percent.

InВ 1999вЂ”2000, at the expense ofВ the funds ofВ the Cooperation Fund for Economic Development ofВ the Republic ofВ Korea (EDCF), technical re-equipment and development ofВ the telecommunications network inВ the Andijan and Ferghana regions were carried out, aВ 354 km long fiber-optic line was built, switching equipment with aВ capacity ofВ 46 thousand numbers was installed.

The widespread use ofВ fiber-optic telecommunication systems inВ communication networks is due toВ aВ number ofВ their advantages inВ comparison with electrically cable communication systems.

Based on this, the following main advantages ofВ aВ fiber-optic line can be distinguished inВ comparison with electric cable communication systems:

вЂ“В huge bandwidth with transmission speeds ofВ up toВ 40 Gbit/s, operating today, and over 100 Gbit/s, expected inВ the near future. The factors limiting the growth ofВ transmission rates are currently the inertial properties ofВ receivers and radiation sources. However, the use ofВ the spectral compaction method (WDM, wave division multiplexing) increases the total transmission rate over aВ single fiber toВ several Departures/s;

вЂ“В fiber optic cables are completely unaffected byВ electromagnetic interference, lightning and high voltage surges. They do not create any electromagnetic or radio frequency interference;

вЂ“В ensuring complete galvanic isolation between the receiver and the information transmitter, as well as the absence ofВ aВ short circuit inВ the transmission line;

вЂ“В the distance ofВ information transmission for low-cost fiber-optic cables between repeaters is up toВ 5 km. For high-quality commercial systems, the distance between repeaters is up toВ 300 km. Distances close toВ 1000 km have been achieved under laboratory conditions;

вЂ“В the size and weight ofВ fiber optic cables compared toВ all other data cables are very small inВ diameter and extremely light. AВ four-core fiber optic cable weighs approximately 240 kg/km, and aВ 36-core fiber optic cable weighs only 3 kg more.

From the above it follows that the VOLS meet all the requirements ofВ modern telecommunication communication systems. InВ this regard, many experts inВ telecommunications technologies argue that the VOLS will become the main means ofВ transmitting information inВ the future. However, with the growth ofВ the use ofВ fiber-optic information transmission lines inВ telecommunication systems and their development, technical information intelligence systems are also developing, with the help ofВ which information is secretly taken from the VOLS.

All over the world, great attention is paid toВ ensuring information securityВ вЂ“ the state ofВ security ofВ the information environment ofВ society, ensuring its formation, use and development inВ the interests ofВ citizens, organizations, and the state.

Therefore, the development ofВ effective methods and technical means for the protection ofВ information inВ the VOLS is one ofВ the urgent tasks.

Structural, mechanical and electrical technical means are usually used toВ protect information inВ the VOLS. Some ofВ the types ofВ protective equipment ofВ this group are built inВ such aВ way as toВ complicate the mechanical cutting ofВ the cable and prevent access toВ the S [1]. Similar means ofВ protection are widely used inВ traditional wired networks ofВ special communication. Also promising is the use ofВ aВ pair ofВ longitudinal power elements ofВ the OK, which are two steel wires arranged symmetrically inВ aВ polyethylene shell, and used for remote power supply and monitoring ofВ sensors installed inВ the couplings, and monitoring ofВ ND. It is also advisable toВ use aВ kit toВ protect the welding site, which fills the welding site with an opaque solidifying gel. One ofВ the proposed methods ofВ protection is the use ofВ multilayer optical fiber with aВ special structure ofВ reflective and protective shells [2]. The construction ofВ such aВ fiber is aВ multilayer structure with aВ single-mode core. The selected ratio ofВ the refractive coefficients ofВ the layers makes it possible toВ transmit aВ multimode control noise optical signal along the annular guide layer. There is no connection between the control and information optical signals inВ the normal state. Ring protection also makes it possible toВ reduce the level ofВ radiation ofВ an information optical signal through the side surface ofВ the S (byВ means ofВ leakage modes arising at the bends ofВ the fiber ofВ various sections ofВ the communication line). Attempts toВ penetrate toВ the core are detected byВ changing the level ofВ the control (noise) signal or byВ mixing it with the information signal. The location ofВ the ND is determined with high accuracy using aВ reflectometer.

Many works are devoted toВ methods and means ofВ information protection inВ the VOLS, including inВ [3] toВ protect information, the magnitude ofВ the inhomogeneity ofВ electromagnetic radiation propagation through aВ cable inВ the radio frequency range is controlled, which is introduced into aВ waveguide channel with aВ constant length ofВ wave resistance, made inВ the form ofВ an electrically conductive shell covering at least one electronic conductor, located along the fibers, and the presence ofВ unauthorized access toВ the information transmitted through the fibers is judged byВ the change inВ the magnitude ofВ the inhomogeneity ofВ the propagation ofВ electromagnetic radiation inВ the radio frequency range. The protection system contains aВ combined cable and aВ lock for changing the parameters ofВ the propagation ofВ electromagnetic radiation ofВ the radio frequency range connected toВ an electronic conductor.

AВ method ofВ protecting information from unauthorized access inВ fiber-optic communication lines is proposed and can be used inВ fiber-optic systems for transmitting confidential information.

Figure 1 shows aВ block diagram ofВ aВ device implementing the proposed method ofВ protecting an information signal from unauthorized access inВ aВ fiber-optic communication line. AВ device implementing the proposed method ofВ protecting an information signal from unauthorized access inВ aВ fiber-optic communication line contains: on the transmitting side 1, an information signal generator 2, aВ mixer 3, aВ source 4 ofВ transmitted optical radiation, aВ noise signal photodetector 5, aВ directional coupler 6 with inputs 6вЂ”2 and output 6вЂ”1, aВ fiber-optic communication line 7, on the receiving 8 side there is aВ directional 9 coupler with inputs 9вЂ”1 and output 9вЂ”2, aВ total signal photodetector 10, aВ mixer 11, delay lines 12, an inverse noise signal shaper 13, source 14 ofВ noise optical radiation and generator 15 ofВ noise signal.

When implementing the proposed method ofВ protecting the information signal from unauthorized access inВ the fiber-optic communication line, the following operations are performed:

вЂ“В on the receiving side 8 ofВ the fiber-optic communication lineВ 7:

1) generate aВ noise signal using the generatorВ 15,

2) an inverse noise signal is generated using the inverterВ 13,

3) using the delay line 12, delays ofВ the inverse noise signal are produced for aВ time,

4) modulate the transmitted optical noise radiation inВ the optical radiation source 14 with aВ noise signal,

5) the transmitted noise optical radiation is introduced through the input 9вЂ”1 ofВ the directional coupler 9, into the fiber-optic communication lineВ 7,

вЂ“В on the transmitting side 1 ofВ the fiber-optic communication lineВ 7:

1) form the transmitted information signal using the shaperВ 2,

2) output through the output 6вЂ”1 ofВ the directional coupler 6, from the fiber-optic communicationВ line

7 ofВ the received optical noise radiation,

3) aВ noise signal is generated from the received optical noise radiation using aВ photodetectorВ 5,

4) form aВ total signal byВ mixing an information and noise signal using aВ mixerВ 3,

5) modulate the transmitted optical radiation inВ the source 4 ofВ the transmitted optical radiation with aВ total signal,

6) the transmitted optical radiation is introduced through the input 6вЂ”2 ofВ the directional coupler 6, into the fiber-optic communication lineВ 7,

вЂ“В on the receiving side 8 ofВ the fiber-optic communication lineВ 7:

1) the received optical radiation is output through the output 9вЂ”2 ofВ the directional coupler 9 from the fiber-optic communication lineВ 7,

2) aВ total signal is generated from the received optical radiation using aВ photodetectorВ 10,

3) mixer 11В byВ shifting the delayed inverse noise signal toВ the total signal, an information signal is isolated

When using the proposed method ofВ protecting an information signal from unauthorized access inВ aВ fiber-optic communication line, inВ which aВ noise signal is generated on the receiving side before the total signal is formed, which is transmitted toВ the transmitting side ofВ the fiber-optic communication line for mixing toВ the information signal.

On the receiving side, inВ the process ofВ shifting toВ the total signal, the delayed inverse noise signal occurs with aВ complete phase coincidence ofВ the noise and its inverse signal. As aВ result, the noise signal is fully compensated, the information signal is allocated and the information inВ the fiber-optic communication line is protected from unauthorized access.

Fig. 1. Block diagram ofВ the device

AВ method ofВ protecting an information signal from unauthorized access inВ aВ fiber-optic communication line, consisting inВ the fact that an information signal is formed on the transmitting side ofВ aВ fiber-optic communication line, aВ total signal is formed byВ mixing aВ noise and information signal, formed byВ modulating the total signal ofВ the optical radiation toВ be transmitted and introduced into aВ fiber-optic communication line, and on the receiving side ofВ the fiber-optic communication line, the received optical radiation is output from it, from the received optical radiation, aВ total signal is formed from which an information signal is isolated, characterized inВ that before the formation ofВ the total signal, an initial and inverse noise signal is formed on the receiving side, modulated with the initial noise signal ofВ optical radiation and injected into the fiber-optic communication line, and the received optical radiation is output from it on the transmitting side ofВ the fiber-optic communication line, aВ noise signal is formed from the received optical radiation, which is subject toВ the displacement ofВ the information signal, and the allocation ofВ the information signal on the receiving side is made byВ mixing the delayed inverse noise signal toВ the total signal, and the delay time ofВ the inverse noise signal is determined byВ the expression, where: L is the length ofВ the optical fiber; v is the speed ofВ optical radiation inВ the optical fiber.

Literature

1.В Korolkov, I. A. Kraschenko, V. G. Matyukhin, S. G. Sinev. Problems ofВ protecting information transmitted over fiber-optic communication lines from unauthorized access/ Information Society, 1997, issue 1, pp. 74вЂ”77

2. A. V. Boos, O. N. Shukhardin. Analysis ofВ the problems ofВ ensuring the security ofВ information transmitted via optical communication channels and ways toВ solve them.//Informational counteraction toВ the threats ofВ terrorism: scientific and practical. Journal. /FSUE STC, Moscow. 2005, No. 5. p. 172180.

3. K.E.Rumyantsev, I.E. Khayrov. Protection ofВ information transmitted via LED communication lines..//Information counteraction toВ terrorism threats: scientific and practical. Journal. /FSUE STC, Moscow. 2004, No. 2. pp. 27В вЂ“В 32.

COMPUTER MODEL OFВ MICRO-HYDROELECTRIC POWER STATION USING THE POTENTIAL ENERGY OFВ GEOTHERMAL WATERS

UDC 004.94

Kuldashov Obbozjon Xokimovich

Doctor ofВ Technical Sciences, Professor ofВ the Scientific Research Institute вЂњPhysics ofВ Semiconductors and MicroelectronicsвЂќ at the National University ofВ Uzbekistan

Dadazhonov Tulanboy

Senior Lecturer ofВ the Department ofВ Electronics and Instrumentation ofВ the Fergana Polytechnic Institute

Fergana Polytechnic Institute

Annotation. AВ model ofВ joint operation ofВ aВ microВ вЂ“ hydroelectric power plant and aВ geothermal water facility has been developed, taking into account their main technical and technological characteristics inВ aВ wide range ofВ operating conditions, including rotor rotation speeds, generator excitation voltage, generator phase currents and output voltages inВ general.

Keywords: microВ вЂ“ hydroelectric power plant, model, HydraulicTurbine and Governor (HTG) unit, rotor rotations, generator excitation voltage, generator phase currents and output voltages.

РђРЅРЅРѕС‚Р°С†РёСЏ. Р Р°Р·СЂР°Р±РѕС‚Р°РЅР° РјРѕРґРµР»СЊ СЃРѕРІРјРµСЃС‚РЅРѕР№ СЂР°Р±РѕС‚С‹ РјРёРєСЂРѕВ вЂ“ Р“РРЎ РёВ РѕР±СЉРµРєС‚Р° РіРµРѕС‚РµСЂРјР°Р»СЊРЅРѕР№ РІРѕРґС‹, СЃВ СѓС‡С‘С‚РѕРј РёС… РѕСЃРЅРѕРІРЅС‹С… С‚РµС…РЅРёРєРѕ-С‚РµС…РЅРѕР»РѕРіРёС‡РµСЃРєРёС… С…Р°СЂР°РєС‚РµСЂРёСЃС‚РёРє РІВ С€РёСЂРѕРєРѕРј РґРёР°РїР°Р·РѕРЅРµ СЌРєСЃРїР»СѓР°С‚Р°С†РёРѕРЅРЅС‹С… СѓСЃР»РѕРІРёР№, РІВ С‚РѕРј С‡РёСЃР»Рµ СЃРєРѕСЂРѕСЃС‚Рё РІСЂР°С‰РµРЅРёСЏ СЂРѕС‚РѕСЂР°, РЅР°РїСЂСЏР¶РµРЅРёРµ РІРѕР·Р±СѓР¶РґРµРЅРёСЏ РіРµРЅРµСЂР°С‚РѕСЂР°, С„Р°Р·РЅС‹Рµ С‚РѕРєРё РіРµРЅРµСЂР°С‚РѕСЂР° РёВ РІС‹С…РѕРґРЅС‹Рµ РЅР°РїСЂСЏР¶РµРЅРёСЏ РІВ С†РµР»РѕРј.

РљР»СЋС‡РµРІС‹Рµ СЃР»РѕРІР°: РјРёРєСЂРѕВ вЂ“ Р“РРЎ, РјРѕРґРµР»СЊ, Р±Р»РѕРє HydraulicTurbine and Governor (HTG), РІСЂР°С‰РµРЅРёСЏ СЂРѕС‚РѕСЂР°, РЅР°РїСЂСЏР¶РµРЅРёРµ РІРѕР·Р±СѓР¶РґРµРЅРёСЏ РіРµРЅРµСЂР°С‚РѕСЂР°, С„Р°Р·РЅС‹Рµ С‚РѕРєРё РіРµРЅРµСЂР°С‚РѕСЂР° РёВ РІС‹С…РѕРґРЅС‹Рµ РЅР°РїСЂСЏР¶РµРЅРёСЏ.

The microelectric power plant model consisting ofВ aВ hydraulic turbine and aВ synchronous generator is shown inВ Fig.1. The Hydraulic Turbine and Governor (HTG) unit is aВ model ofВ aВ hydraulic turbine with aВ control system. The control system includes aВ proportional differential (PID) controller and aВ control servo motor [1]. The general scheme ofВ the model is shown inВ Fig.В 2.

Fig.1. microGES model

Fig. 2. Model ofВ the control system

The required values ofВ angular rotation speed (wref) and power (Pref) are fed toВ the first two inputs ofВ the unit. The third and fourth inputs ofВ the unit receive the actual values ofВ the angular rotation speed (we) and active power (Pe). The fifth input is supplied with the deviation ofВ the angular rotation frequency ofВ the synchronous generator rotor (dw). The output signals are the mechanical power that must be supplied toВ the corresponding input ofВ the synchronous machine unit (Rm), and the value ofВ the hydraulic turbine gate opening (gate). Inputs 2 and 4 may remain unconnected if aВ signal about the shutter position is used as feedback, and not aВ speed deviation. Ice input and output values are measured inВ relative units.

The hydraulic turbine itself is modeled byВ aВ nonlinear system shown inВ Fig.В 3.

Fig. 3. Hydraulic turbine model

The servomotor controlling the turbine gate is modeled byВ aВ second-order system (Fig.4).

Fig. 4. Servomotor model

The window for setting parameters ofВ the Hydraulic Turbine and Governor (HTG) block is shown inВ Fig.5.

Fig.5. Window for setting parameters ofВ the Hydraulic Turbine and Governor block

Unit parameters (HTG)В :

РљРѕРЅРµС† РѕР·РЅР°РєРѕРјРёС‚РµР»СЊРЅРѕРіРѕ С„СЂР°РіРјРµРЅС‚Р°.

РўРµРєСЃС‚ РїСЂРµРґРѕСЃС‚Р°РІР»РµРЅ РћРћРћ В«Р›РёС‚Р РµСЃВ».

РџСЂРѕС‡РёС‚Р°Р№С‚Рµ СЌС‚Сѓ РєРЅРёРіСѓ С†РµР»РёРєРѕРј, РєСѓРїРёРІ РїРѕР»РЅСѓСЋ Р»РµРіР°Р»СЊРЅСѓСЋ РІРµСЂСЃРёСЋ (https://www.litres.ru/book/abdullajon-odiljon-o/all-sciences-7-2022-international-scientific-journal-68616941/) РЅР° Р›РёС‚Р РµСЃ.

Р‘РµР·РѕРїР°СЃРЅРѕ РѕРїР»Р°С‚РёС‚СЊ РєРЅРёРіСѓ РјРѕР¶РЅРѕ Р±Р°РЅРєРѕРІСЃРєРѕР№ РєР°СЂС‚РѕР№ Visa, MasterCard, Maestro, СЃРѕ СЃС‡РµС‚Р° РјРѕР±РёР»СЊРЅРѕРіРѕ С‚РµР»РµС„РѕРЅР°, СЃ РїР»Р°С‚РµР¶РЅРѕРіРѕ С‚РµСЂРјРёРЅР°Р»Р°, РІ СЃР°Р»РѕРЅРµ РњРўРЎ РёР»Рё РЎРІСЏР·РЅРѕР№, С‡РµСЂРµР· PayPal, WebMoney, РЇРЅРґРµРєСЃ.Р”РµРЅСЊРіРё, QIWI РљРѕС€РµР»РµРє, Р±РѕРЅСѓСЃРЅС‹РјРё РєР°СЂС‚Р°РјРё РёР»Рё РґСЂСѓРіРёРј СѓРґРѕР±РЅС‹Рј Р’Р°Рј СЃРїРѕСЃРѕР±РѕРј.

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